Electronic structure of a monoatomic Cu2Si layer on a Si(111) substrate

PHYSICAL REVIEW MATERIALS - Volume: 3 - Issue: 4 - Article Number: 044004 - DOI: 10.1103/PhysRevMaterials.3.04400- Published: April 24 2019

Article

Cameau, M (Cameau, M.)[ 1,2 ] ; Yukawa, R (Yukawa, R.)[ 3 ] ; Chen, CH (Chen, C-H.)[ 4 ] ; Huang, A (Huang, A.)[ 4 ] ; Ito, S (Ito, S.)[ 5 ] ; Ishibiki, R (Ishibiki, R.)[ 6 ] ; Horiba, K (Horiba, K.)[ 3 ] ; Obata, Y (Obata, Y.)[ 3 ] ; Kondo, T (Kondo, T.)[ 6,7 ] ; Kumigashira, H (Kumigashira, H.)[ 3 ] ; Jeng, HT (Jeng, H-T.)[ 4,8,9 ] ; D'angelo, M (D'angelo, M.)[ 2 ] ; Matsuda, I (Matsuda, I.)[ 5 ]

[ 1 ] Sorbonne Univ, IMPMC, F-75005 Paris, France
[ 2 ] Sorbonne Univ, INSP, F-75005 Paris, France
[ 3 ] High Energy Accelerator Res Org KEK, Inst Mat Struct Sci, Tsukuba, Ibaraki 3050801, Japan
[ 4 ] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
[ 5 ] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
[ 6 ] Univ Tsukuba, Fac Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan
[ 7 ] Tokyo Inst Technol, Mat Res Ctr Element Strategy, Yokohama, Kanagawa 2268503, Japan
[ 8 ] Natl Ctr Theoret Sci, Phys Div, Hsinchu 30013, Taiwan
[ 9 ] Acad Sinica, Inst Phys, Taipei 11529, Taiwan